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Japanese journal of applied physics
cm-3) polycrystalline silicon (poly-Si) deposited by reduced pressure chemical
vapor deposition was used as the gate material. Electrical equivalent oxide ...
by Nihon Butsuri Gakkai, Ōyō Butsuri Gakkai
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Material and electrical characterization of titanium nitride/silicon dioxide gate stacks
Silicon and silicon dioxide have been driving the enormous growth, the microelectronics industry has experienced over the past four decades.
by Durai Vishak Nirmal Ramaswamy, Arizona State University
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Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment
... We report the material and electrical properties of Erbium Oxide (Er2O3)
thin ... Introduction Silicon dioxide (SiO2) has served as the gate dielectric
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by V. Narayanan, F. Roozeboom, D-L. Kwong, H. Iwai, E. P. Gusev, P. J. Timans
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JAP
Position of the stacking fault Electrical characteristics Physical phenomena
Fully covered by the gate No leakage Large turn-on voltage shift Potential ...
by American Institute of Physics, American Physical Society, Scitation (Online service)
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Electrical world, a review of current progress in electricity and its practical applications
The curves were integrated to get the mean values of the s|>eed and gate-
openings of the turbines : the turbine, hydraulic, friction and electrical horse
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Electrical Engineering
Logic gate A logic gate performs a logical operation on one or more logic inputs
... Logic gates are primarily implemented electronically using diodes or ...
by Stephen Ward
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Characterization of floating gate implantation dose and its effect on PMOS Electrical Erasable Cell (PEEC) memory arrays
This work deals with the reliability improvement for a unique type of memory cell, namely, the P-type Metal Oxide Semiconductor (PMOS) EEPROM Cell PEEC.
by Daniel Alvarez Vega, Arizona State University
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Electrical Engineering 101, Everything You Should Have Learned in School...but Probably Didn't
Can you make this gate with basic semiconductors as well? ... Figure 3.27 Simple
transistor NAND gate. The NOR Gate Yep, you guessed it, this is the NOT OR ...
by Darren Ashby, Ira M Cohen, David R Dowling
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Silicon nitride, silicon dioxide, and emerging dielectrics 9
This paper reviews several electrical characterization techniques that are
useful for revealing ... defects, and impurities in these advanced gate stacks.
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by R. Ekwal Sah
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Electrical Overstress/Electrostatic Discharge Symposium proceedings, 1999, Orlando, Florida September 28-30, 1999
Simply put, as gate-oxide is stressed electrically, defects are generated at
random within the oxide layer. As stress time increases, the defect density ...
by ESD Association, Institute of Electrical and Electronics Engineers
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